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| High Barrier Silicon Schottky Diodes: Bridge Octoquad V 2.00 MA4E2099-1284 Features n n n n n n ODS-1284 Outline (Topview) Designed for High Dynamic Range Applications Low Parasitic Capitance and Inductance Low Parasitic Resistance Recommended for DC-12GHz Uniform Electrical Characteristics with Each Junction Rugged HMIC Construction with Polyimide Scratch Protection Description The MA4E2099-1284 Bridge Octoquad is offered for high dynamic range applications. This device is constructed with Silicon High Barrier Schottky Diodes fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process to ensure electrical characteristics uniformity for each junction. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device. Applications The devices can be used in higher power mixer, detector, and limiter circuits through 12 GHz. Dim A B C Inches Millimeters Min. 0.0285 0.0285 0.0040 0.0035 0.0165 Max. 0.0297 0.0297 0.0060 0.0043 0.0173 Min. 0.725 0.725 0.102 0.090 0.420 Max. 0.755 0.755 0.153 0.110 0.440 Absolute Maximum Ratings @ +25 C Parameter Operating Temperature Storage Temperature Forward Current Reverse Voltage RF C.W. Incident Power RF & DC Dissipated Power 1 D Sq. E Value -55 C to +150 C -55 C to +150 C 20 mA l -9 V l + 25 dBm 100 mW 2 1 Equivalent Circuit 3 4 1. Exceeding any of these values may result in permanent damage 1 High Barrier Silicon Schottky Diodes: Bridge Octoquad MA4E2099-1284 V 2.00 Electrical Specifications @ 25 C (Measured at Adjacent Ports: 1-2, 2-3, 3-4, 4-1) Part Number Vf @ 1 mA (V) Vf @ 10 mA (V) Ct @ 0V (pF) Vb @10 A (V ) Rt Slope Resistance ( Vf1 - Vf2 ) / (10.5 mA-9.5 mA ) () Max 16 Min MA4E2099-1284 1.08 Max 1.24 Min 1.32 Max 1.52 Typ 0.16 Min 9 Rt is the dynamic slope resistance where Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA) and Rs is the Ohmic Resistance. Handling All semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin oils. The use of plastic tipped tweezers or vacuum pickups is strongly recommended for individual components. The top surface of the die has a protective polyimide coating to minimize damage. Bulk handling should insure that abrasion and mechanical shock are minimized. The rugged construction of these HMIC devices allows the use of standard handling and die attach techniques. It is important to note however that industry standard electrostatic discharge (ESD) control is required at all times, due to the sensitive nature of Schottky devices having a Class 0 rating. Die Attach Die attach for these devices is made through the use of conventional gold plated die attach technology. A vacuum collet or plastic tweezers are recommended for device placement onto the circuit or ground plane. The device backside metal consists of approximately 0.3 um Ti-Pt-Au. This metallization scheme allows for die attach to hard and soft substrates ( for via grounding ) and Au plated metal ground planes with 80Au/20Sn and Sn63/Pb37 solders. The maximum time-temperature profile is 300 C for 5 sec. Attachment of die to circuit medium with electrically conductive silver epoxies is also acceptable. Die Bonding Wire and ribbon bonding from the topside bond pads to the circuit can be accomplished with 1 mil dia. gold wire or 1/4 x 3 mil sq. gold ribbon. Ball bonding, wedge bonding, or thermo-compression bonding are all acceptable. The topside of the die is protected with a durable polymer for impact and scratch protection. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 High Barrier Silicon Schottky Diodes: Bridge Octoquad MA4E2099-1284 V 2.00 MA4E2099-1284 High Barrier SPICE PARAMETERS (per Diode) Is (nA) 5.7 E-2 Rs () 6 N 1.20 Cj0 ( pF ) 2.4 E-1 M 0.5 Ik (mA) 4 Vj (V) 8.0 E-2 FC 0.5 BV (V) 5.0 IBV (mA) 1.0 E-2 Ordering Information Part Number MA4E2099-1284W MA4E2099-1284 MA4E2099-1284T Package Wafer on Frame Die in Carrier Tape/Reel 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 |
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